Alle IGBT. IXGX320N60B3 Datenblatt

 

IXGX320N60B3 . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXGX320N60B3

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat): 1.6V

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 500A

Höchstzulässige Sperrschichttemperatur (Tj), °C:

Anstiegszeit: 165

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: PLUS247

Ersatz (vergleichstyp) für IXGX320N60B3 Transistor

 

IXGX320N60B3 Datasheet (PDF)

1.1. ixgx320n60b3.pdf Size:193K _igbt_a

IXGX320N60B3
IXGX320N60B3

Preliminary Technical Information GenX3TM 600V VCES = 600V IXGK320N60B3 IC90 = 320A IGBTs IXGX320N60B3 ≤ VCE(sat) ≤ ≤ 1.6V ≤ ≤ Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 150°C 600 V Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V PLUS247 (IXGX) VGEM T

1.2. ixgx320n60a3.pdf Size:199K _igbt_a

IXGX320N60B3
IXGX320N60B3

GenX3TM 600V IGBTs VCES = 600V IXGK320N60A3 IC25 = 320A IXGX320N60A3 ≤ VCE(sat) ≤ ≤ 1.25V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C Tab E E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247TM (IXGX) IC25 TC = 25°C (C

4.1. ixgx32n170h1.pdf Size:523K _ixys

IXGX320N60B3
IXGX320N60B3

Advance Technical Information IXGX 32N170H1 VCES = 1700 V High Voltage IC25 = 75 A IGBT with Diode VCE(sat) = 3.3 V tfi(typ) = 290 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25C75 A G = Gate, C = Collector, IC90 TC = 90C32 A

4.2. ixgx32n170ah1.pdf Size:129K _igbt_a

IXGX320N60B3
IXGX320N60B3

IXGX 32N170AH1 VCES = 1700 V High Voltage IGBT IC25 = 32 A with Diode VCE(sat) = 5.0 V tfi(typ) = 50 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C32 A G = Gate, C = Collector, IC90 TC = 90°C21 A E = Emitter, TAB =

4.3. ixgx32n170h1.pdf Size:520K _igbt_a

IXGX320N60B3
IXGX320N60B3

Advance Technical Information IXGX 32N170H1 VCES = 1700 V High Voltage IC25 = 75 A IGBT with Diode VCE(sat) = 3.3 V tfi(typ) = 290 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C75 A G = Gate, C = Collector, IC90 TC

Anderen IGBT... IXGX120N120A3 , IXGX120N120B3 , IXGX120N60A3 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , IXGX28N140B3H1 , IXGX320N60A3 , IRG4BC40U , IXGX32N170AH1 , IXGX32N170H1 , IXGX35N120B , IXGX35N120BD1 , IXGX35N120C , IXGX35N120CD1 , IXGX400N30A , IXGX400N30A3 .

 


IXGX320N60B3
  IXGX320N60B3
  IXGX320N60B3
 
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  IXGX320N60B3
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