Alle IGBT. APT36GA60S Datenblatt

 

APT36GA60S . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: APT36GA60S

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 290

Kollektor-Emitter-Sperrspannung (Vce): 600

Kollektor-Emitter Sättigungsspannung (Vcesat): 1.9

Gate-Emitter-Spitzenspannung (Veg): 30

Kollektor-Dauergleichstrom (Ic): 36

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit: 14

Kollektor-Kapazität (Cc), pF: 226

Transistorgehäuse: TO268AB

Ersatz (vergleichstyp) für APT36GA60S Transistor

 

APT36GA60S Datasheet (PDF)

1.1. apt36ga60b.pdf Size:208K _igbt_a

APT36GA60S
APT36GA60S

 APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

1.2. apt36ga60s.pdf Size:208K _igbt_a

APT36GA60S
APT36GA60S

 APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

1.3. apt36ga60sd15.pdf Size:237K _igbt_a

APT36GA60S
APT36GA60S

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT APT36GA60SD15 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

1.4. apt36ga60bd15.pdf Size:237K _igbt_a

APT36GA60S
APT36GA60S

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT APT36GA60SD15 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

Anderen IGBT... RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , IKW50N60H3 , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 .

 


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IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |