Alle IGBT. HGTD1N120BNS Datenblatt

 

HGTD1N120BNS . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: HGTD1N120BNS

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 1200V

Kollektor-Emitter Sättigungsspannung (Vcesat):

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 5.3A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse:

Ersatz (vergleichstyp) für HGTD1N120BNS Transistor

 

HGTD1N120BNS Datasheet (PDF)

1.1. hgtd1n120bns hgtp1n120bn.pdf Size:92K _fairchild_semi

HGTD1N120BNS
HGTD1N120BNS

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC combin

5.1. hgtd10n4.pdf Size:40K _harris_semi

HGTD1N120BNS
HGTD1N120BNS

HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL ?1.4s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications HGTD10N40F1S, HG

Anderen IGBT... HGT1Y40N60A4D , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , FGPF4536 , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S .

 


HGTD1N120BNS
  HGTD1N120BNS
  HGTD1N120BNS
  HGTD1N120BNS
 
HGTD1N120BNS
  HGTD1N120BNS
  HGTD1N120BNS
 

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Letztes Update

IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |