Alle IGBT. IRGS4615D Datenblatt

 

IRGS4615D . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRGS4615D

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 99

Kollektor-Emitter-Sperrspannung (Vce): 600

Kollektor-Emitter Sättigungsspannung (Vce sat): 1.55

Gate-Emitter-Spitzenspannung (Veg): 20

Kollektor-Dauergleichstrom (Ic): 23

Höchstzulässige Sperrschichttemperatur (Tj), °C: 175

Anstiegszeit: 15

Kollektor-Kapazität (Cc), pF: 45

Transistorgehäuse: TO263

Ersatz (vergleichstyp) für IRGS4615D Transistor

 

IRGS4615D Datasheet (PDF)

1.1. irgs4615d.pdf Size:336K _igbt

IRGS4615D
IRGS4615D

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100°C E E C G G tsc > 5µs, Tjmax = 175°C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications • Appliance Drives • Inverters • UPS → Features Benefits Low VCE(

3.1. irgs4610d.pdf Size:428K _igbt

IRGS4615D
IRGS4615D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100°C E E E C G G G G tsc > 5µs, Tjmax = 175°C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter • Appliance Drives • Inverters •

 4.1. irgs4607d.pdf Size:858K _igbt

IRGS4615D
IRGS4615D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C C IC = 7.0A, TC =100°C E E E G C C tSC 5µs, TJ(max) = 175°C G G G E IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E • Industrial Motor Drive

4.2. irgs4620d.pdf Size:901K _igbt

IRGS4615D
IRGS4615D

 IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100°C E E E E C G C C C G tSC ≥ 5µs, TJ(max) = 175°C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

 4.3. irgs4640d.pdf Size:809K _igbt

IRGS4615D
IRGS4615D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

4.4. irgs4630d.pdf Size:1268K _igbt

IRGS4615D
IRGS4615D

 IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100°C E E E G E C tSC ≥ 5µs, TJ(max) = 175°C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

Anderen IGBT... STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , IRG8B08N120KD , IRG8P08N120KD , IRGB4615D , G40N60B3 , 2E715A , 2E715B , NTE3310 , KE703A , IKD06N60RA , IRGB4715D , IRGS4715D , IRGS4064D .

 

 
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