Alle IGBT. STGW30V60DF Datenblatt

 

STGW30V60DF . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: STGW30V60DF

Markierungscode: GW30V60DF

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 260

Kollektor-Emitter-Sperrspannung (Vce): 600

Kollektor-Emitter Sättigungsspannung (Vcesat): 2.15

Gate-Emitter-Spitzenspannung (Veg): 20

Kollektor-Dauergleichstrom (Ic): 30

Höchstzulässige Sperrschichttemperatur (Tj), °C: 175

Anstiegszeit: 16

Kollektor-Kapazität (Cc), pF: 120

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für STGW30V60DF Transistor

 

STGW30V60DF Datasheet (PDF)

1.1. stgw30v60f.pdf Size:1472K _igbt

STGW30V60DF
STGW30V60DF

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 1 1 • Tail-less switching off 3 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF • Tight parameters distribution Tab • Safe paralleling • Low thermal resistance 3 3 2 2 App

1.2. stgw30v60df.pdf Size:1905K _igbt

STGW30V60DF
STGW30V60DF

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 2 1 • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D²PAK TO-220 • Tight parameters distribution TAB • Safe paralleling • Low therma

4.1. stgw30nc60wd.pdf Size:542K _st

STGW30V60DF
STGW30V60DF

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advanced Power MES

4.2. stgw30nb60h.pdf Size:300K _st

STGW30V60DF
STGW30V60DF

STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V ) CESAT LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based TO-247 on a patented strip

4.3. stgw30nc60vd.pdf Size:335K _st

STGW30V60DF
STGW30V60DF

STGW30NC60VD 40 A, 600 V, very fast IGBT Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Description 3 2 This IGBT utilizes the advanced Power MESH 1 process resulting in an excellent trade-off between switching performance and low on-state TO-247 long leads behavior. Applications High frequency inv

4.4. stgw30nc60kd.pdf Size:351K _st

STGW30V60DF
STGW30V60DF

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 High frequency inverters Motor drivers Description Figure 1. Internal schematic diagram This IGBT uti

4.5. stgw30n90d.pdf Size:575K _st

STGW30V60DF
STGW30V60DF

STGW30N90D 30 A, 900 V very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application 3 2 1 Application TO-247 Induction heating Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram between switching pe

4.6. stgw30nc120hd.pdf Size:308K _st

STGW30V60DF
STGW30V60DF

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features IC VCE(sat) Type VCES @25C @100C STGW30NC120HD 1200V < 2.75V 30A Low on-losses 3 Low on-voltage drop (Vcesat) 2 1 High current capability TO-247 High input impedance (voltage driven) Low gate charge Ideal for soft switching application Application Figure 1. Internal schematic diagram

4.7. stgw30n120kd.pdf Size:386K _st

STGW30V60DF
STGW30V60DF

STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling 3 diode 2 1 Application TO-247 Motor control Description This IGBT utilizes the advanced PowerMESH Figure 1. Internal schematic diagram process resulting in an excelle

4.8. stgw30nb60hd.pdf Size:328K _st

STGW30V60DF
STGW30V60DF

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 VERY HIGH FREQUENCY OPERATION 2 1 OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TORBOSWITCH ANTIPARALLEL DIODE TO-247 DESCRIPTION INTERNAL SCHE

4.9. stgw30h60dfb.pdf Size:419K _igbt

STGW30V60DF
STGW30V60DF

STGW30H60DFB, STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 1.55 V (typ.) @ IC = 30 A 3 3 2 2 • Tight parameters distribution 1 1 TO-247 • Safe paralleling TO-3P • Low thermal resist

4.10. stgw30nc60wd.pdf Size:541K _igbt

STGW30V60DF
STGW30V60DF

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features ■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ■ High frequency motor controls, inverters, UPS TO-247 ■ HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advan

4.11. stgw30h60dlfb.pdf Size:1739K _igbt

STGW30V60DF
STGW30V60DF

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features • Designed for soft commutation only • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 3 1 3 • VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 • Low VF soft recovery co-packaged diode T

4.12. stgw30nc60vd.pdf Size:350K _igbt

STGW30V60DF
STGW30V60DF

STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features ■ High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 ■ High frequency inverters, UPS 1 ■ Motor drive TO-247 long leads ■ SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schemat

4.13. stgw30nc60kd.pdf Size:345K _igbt

STGW30V60DF
STGW30V60DF

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 ■ High frequency inverters ■ Motor drivers Description Figure 1. Internal schematic diagra

4.14. stgw30h60df.pdf Size:1945K _igbt

STGW30V60DF
STGW30V60DF

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 • Safe paralleling 2 1 D²PAK • Low thermal resistance TO-220FP • Short circuit rated TAB • Ultrafast soft recovery antiparallel diode Applications 3 3 • I

4.15. stgw30h65fb.pdf Size:1635K _igbt

STGW30V60DF
STGW30V60DF

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 3 • Minimized tail current 2 1 • VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF • Tight parameters distribution 1 1 1 • Safe paralleling 3 • Low t

4.16. stgw30nc120hd.pdf Size:302K _igbt

STGW30V60DF
STGW30V60DF

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features IC VCE(sat) Type VCES @25°C @100°C STGW30NC120HD 1200V < 2.75V 30A ■ Low on-losses 3 ■ Low on-voltage drop (Vcesat) 2 1 ■ High current capability TO-247 ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Application Figure 1. Internal

4.17. stgw30n120kd.pdf Size:419K _igbt

STGW30V60DF
STGW30V60DF

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 ■ Motor control Description Figure 1. Internal schematic diagram This high voltage and short

Anderen IGBT... STGP30V60F , STGW15H120DF2 , STGW15H120F2 , STGW20H65FB , STGW30H60DF , STGW30H60DFB , STGW30H60DLFB , STGW30H65FB , G40N60B3 , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F .

 


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