Alle IGBT. HGTP3N60C3 Datenblatt

 

HGTP3N60C3 . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: HGTP3N60C3

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 33W

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat): 1.65V

Gate-Emitter-Spitzenspannung (Veg): 20V

Kollektor-Dauergleichstrom (Ic): 6A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit: 5

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für HGTP3N60C3 Transistor

 

HGTP3N60C3 Datasheet (PDF)

2.1. hgtp3n60.pdf Size:390K _harris_semi

HGTP3N60C3
HGTP3N60C3

HGTP3N60C3D, HGT1S3N60C3D, S E M I C O N D U C T O R HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB 6A, 600V at TC = +25oC EMITTER COLLECTOR 600V Switching SOA Capability GATE Typical Fall Time - 130ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss Hyperfast Ant

Anderen IGBT... HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , RJP30E2DPP-M0 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , HGTP5N120CND , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 .

 


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Letztes Update

IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |