Alle IGBT. IRG4PC30FD Datenblatt

 

IRG4PC30FD . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRG4PC30FD

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 100W

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat):

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 17A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 175

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO247AC

Ersatz (vergleichstyp) für IRG4PC30FD Transistor

 

IRG4PC30FD Datasheet (PDF)

1.1. irg4pc30f.pdf Size:145K _international_rectifier

IRG4PC30FD
IRG4PC30FD

D I I T I T D T I T I T Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

1.2. irg4pc30fd.pdf Size:210K _international_rectifier

IRG4PC30FD
IRG4PC30FD

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

1.3. irg4pc30f.pdf Size:150K _igbt_a

IRG4PC30FD
IRG4PC30FD

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE

1.4. irg4pc30fd.pdf Size:216K _igbt_a

IRG4PC30FD
IRG4PC30FD

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and high

Anderen IGBT... IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , CT60AM-18F , IRG4PC30K , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W , IRG4PC40F , IRG4PC40FD .

 


IRG4PC30FD
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