Alle IGBT. IXSH24N60AU1 Datenblatt

 

IXSH24N60AU1 . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXSH24N60AU1

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat):

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 48A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für IXSH24N60AU1 Transistor

 

IXSH24N60AU1 Datasheet (PDF)

1.1. ixsh24n60 a.pdf Size:111K _ixys

IXSH24N60AU1
IXSH24N60AU1

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G TAB C VCGR TJ = 25C to 150C, RGE = 1M? 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25C 48 A E = Emitter TAB =

1.2. ixsh24n60u1 ixsh24n60au1.pdf Size:37K _ixys

IXSH24N60AU1
IXSH24N60AU1

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C600 V VCGR TJ = 25C to 150C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25C48 A E = Emitter, TAB = Collecto

1.3. ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf Size:102K _ixys

IXSH24N60AU1
IXSH24N60AU1

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V (TAB) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25C48 A

1.4. ixsh24n60b.pdf Size:100K _igbt_a

IXSH24N60AU1
IXSH24N60AU1

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

1.5. ixsh24n60u1.pdf Size:36K _igbt_a

IXSH24N60AU1
IXSH24N60AU1

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C48 A E = Emitter, TAB

1.6. ixsh24n60bd1.pdf Size:100K _igbt_a

IXSH24N60AU1
IXSH24N60AU1

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V (TAB) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 (D3) ( IXST) IC25 TC

1.7. ixsh24n60a.pdf Size:110K _igbt_a

IXSH24N60AU1
IXSH24N60AU1

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G TAB C VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 48 A E = Em

1.8. ixsh24n60au1.pdf Size:36K _igbt_a

IXSH24N60AU1
IXSH24N60AU1

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E G = Gate, C = Collector, IC25 TC = 25°C48 A E = Emitter, TAB

1.9. ixsh24n60.pdf Size:110K _igbt_a

IXSH24N60AU1
IXSH24N60AU1

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G TAB C VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V E VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 48 A E = Em

Anderen IGBT... IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , SGW10N60A , IXSH24N60U1 , IXSH25N100 , IXSH25N100A , IXSH25N120A , IXSH25N120AU1 , IXSH30N60 , IXSH30N60A , IXSH30N60AU1 .

 


IXSH24N60AU1
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IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |