Alle IGBT. IXSH35N140A Datenblatt

 

IXSH35N140A . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IXSH35N140A

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 1400V

Kollektor-Emitter Sättigungsspannung (Vcesat):

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 70A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit:

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO247

Ersatz (vergleichstyp) für IXSH35N140A Transistor

 

IXSH35N140A Datasheet (PDF)

1.1. ixsh35n140a.pdf Size:144K _igbt_a

IXSH35N140A
IXSH35N140A

VCES = 1400V High Voltage IXSH35N140A IC90 = 35A High speed IGBT ≤ VCE(sat) ≤ ≤ 4.0V ≤ ≤ Short Circuit SOA Capability tfi(typ) = 200ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1400 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V C E Tab VGES Continuous ±20 V VGEM Transient ±30 V G = Gate C = Collector IC25 TC = 25°C 70 A E = Emi

2.1. ixsh35n120b ixst35n120b.pdf Size:82K _ixys

IXSH35N140A
IXSH35N140A

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25C70 A TO-268 ( IXST) IC90 TC = 90C35 A ICM TC = 25C, 1 ms 140 A G S

2.2. ixsh35n100a.pdf Size:78K _igbt_a

IXSH35N140A
IXSH35N140A

High speed IGBT IXSH 35N100A VCES = 1000 V IXSM 35N100A IC25 = 70 A VCE(sat) = 3.5 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C70 A IC90 TC = 90°C35 A TO-204 AE (IXSM) ICM TC = 25°C, 1 ms 140 A

2.3. ixsh35n120b.pdf Size:80K _igbt_a

IXSH35N140A
IXSH35N140A

IXSH 35N120B IGBT IC25 = 70 A IXST 35N120B VCES = 1200 V VCE(sat) = 3.6 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C70 A TO-268 ( IXST) IC90 TC = 90°C35 A ICM TC = 25°C, 1

2.4. ixsh35n120a.pdf Size:63K _igbt_a

IXSH35N140A
IXSH35N140A

High Voltage, IXSH 35N120A VCES = 1200 V High speed IGBT IC25 = 70 A VCE(sat) = 4 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C70 A G = Gate, C = Collector, IC90 TC = 90°C35 A E = Emitter, TAB = Collect

Anderen IGBT... IXSH30N60AU1 , IXSH30N60B , IXSH30N60BD1 , IXSH30N60C , IXSH30N60CD1 , IXSH30N60U1 , IXSH35N100A , IXSH35N120A , IXGH40N60B2D1 , IXSH40N60 , IXSH40N60A , IXSH40N60B , IXSH45N100 , IXSH45N120 , IXSH50N60B , IXSH50N60BS , IXSK30N60BD1 .

 


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