Alle IGBT. MGP15N35CL Datenblatt

 

MGP15N35CL . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: MGP15N35CL

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc): 136W

Kollektor-Emitter-Sperrspannung (Vce): 380V

Kollektor-Emitter Sättigungsspannung (Vcesat): 1.8V

Gate-Emitter-Spitzenspannung (Veg): 22V

Kollektor-Dauergleichstrom (Ic): 15A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 175

Anstiegszeit: 13000

Kollektor-Kapazität (Cc), pF: 1000pF

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für MGP15N35CL Transistor

 

MGP15N35CL Datasheet (PDF)

1.1. mgp15n35cl-d.pdf Size:250K _onsemi

MGP15N35CL
MGP15N35CL

MGP15N35CL, MGB15N35CL Preferred Device Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 15 AMPERES protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high v

4.1. mgp15n60urev0.pdf Size:120K _motorola

MGP15N35CL
MGP15N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 15 A @ 90C voltageblocking capability. It also provides fast switching char

4.2. mgp15n60u.pdf Size:125K _motorola

MGP15N35CL
MGP15N35CL

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's? Data Sheet MGP15N60U Insulated Gate Bipolar Transistor NChannel EnhancementMode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO220 termination scheme to provide an enhanced and reliable high 15 A @ 90C voltageblocking capability. It also provides low onvolta

4.3. mgp15n40cl mgb15n40cl.pdf Size:91K _onsemi

MGP15N35CL
MGP15N35CL

MGP15N40CL, MGB15N40CL Preferred Device Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features 15 AMPERES monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses 410 VOLTS (Clamped) include Ignition, Direct Fuel Injectio

Anderen IGBT... MDI300-12A4 , MDI550-12A4 , MDI75-12A3 , MGB15N35CLT4 , MGB15N40CL , MGP11N60E , MGP11N60ED , MGP14N60E , HGTG30N60A4 , MGP15N38CL , MGP15N40CL , MGP15N43CL , MGP15N60U , MGP20N14CL , MGP20N35CL , MGP20N40CL , MGP20N60U .

 


MGP15N35CL
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IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |