Alle IGBT. SGH15N60RUFD Datenblatt

 

SGH15N60RUFD . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SGH15N60RUFD

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat): 2V

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 15A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit: 70

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO3P

Ersatz (vergleichstyp) für SGH15N60RUFD Transistor

 

SGH15N60RUFD Datasheet (PDF)

1.1. sgh15n60rufd.pdf Size:612K _fairchild_semi

SGH15N60RUFD

1.2. sgh15n60rufd.pdf Size:268K _samsung

SGH15N60RUFD
SGH15N60RUFD

CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.3. sgh15n60rufd.pdf Size:649K _igbt

SGH15N60RUFD
SGH15N60RUFD

March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

Anderen IGBT... SGF80N60UF , SGF80N60UFD , SGH10N120RUF , SGH10N120RUFD , SGH10N60RUFD , SGH13N60UFD , SGH15N120RUF , SGH15N120RUFD , CT60AM-18F , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , SGH30N60RUF , SGH30N60RUFD , SGH40N60UF .

 


SGH15N60RUFD
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IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |