Alle IGBT. SGH30N60RUF Datenblatt

 

SGH30N60RUF . IGBT. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: SGH30N60RUF

Kanaltyp: N-Channel

Gesamt-Verlustleistung (Pc):

Kollektor-Emitter-Sperrspannung (Vce): 600V

Kollektor-Emitter Sättigungsspannung (Vcesat): 2V

Gate-Emitter-Spitzenspannung (Veg):

Kollektor-Dauergleichstrom (Ic): 30A

Höchstzulässige Sperrschichttemperatur (Tj), °C: 150

Anstiegszeit: 80

Kollektor-Kapazität (Cc), pF:

Transistorgehäuse: TO3P

Ersatz (vergleichstyp) für SGH30N60RUF Transistor

 

SGH30N60RUF Datasheet (PDF)

1.1. sgh30n60rufd.pdf Size:704K _fairchild_semi

SGH30N60RUF

1.2. sgh30n60rufd.pdf Size:284K _samsung

SGH30N60RUF
SGH30N60RUF

CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.3. sgh30n60rufd.pdf Size:658K _igbt

SGH30N60RUF
SGH30N60RUF

September 2000 IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @

Anderen IGBT... SGH15N120RUF , SGH15N120RUFD , SGH15N60RUFD , SGH20N120RUF , SGH20N120RUFD , SGH20N60RUFD , SGH23N60UFD , SGH25N120RUF , G7N60C3D , SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 .

 


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IGBT IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |