Alle MOSFET. 2N6787-SM Datenblatt

 

2N6787-SM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: 2N6787-SM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 20 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximaler Drainstrom (Id): 6 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand RDS(on): 1.8 Ohm

Transistorgehäuse: TO220SM

Ersatz (vergleichstyp) für 2N6787-SM Transistor

 

2N6787-SM Datasheet (PDF)

5.1. 2n6784 irff210.pdf Size:130K _international_rectifier

2N6787-SM
2N6787-SM

PD - 90424C IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET?TRANSISTORS JANTXV2N6784 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF210 200V 1.5? 2.25A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

5.2. 2n6788 irff120.pdf Size:131K _international_rectifier

2N6787-SM
2N6787-SM

PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET?TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30? 6.0A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

 5.3. 2n6782 irff110.pdf Size:131K _international_rectifier

2N6787-SM
2N6787-SM

PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET?TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60? 3.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la

5.4. 2n6786 irff310.pdf Size:129K _international_rectifier

2N6787-SM
2N6787-SM

PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET?TRANSISTORS JANTXV2N6786 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF310 400V 3.6? 1.25A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this l

 5.5. irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf Size:99K _international_rectifier

2N6787-SM



5.6. 2n6782.pdf Size:23K _semelab

2N6787-SM
2N6787-SM

2N6782 MECHANICAL DATA Dimensions in mm (inches) NCHANNEL 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) POWER MOSFET 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) APPLICATIONS 7.75 (0.305) min. 8.51 (0.335) dia. FAST SWITCHING MOTOR CONTROLS 5.08 (0.200) typ. POWER SUPPLIES 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.03

5.7. 2n6786.pdf Size:12K _semelab

2N6787-SM

2N6786 Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 400V 2.54 ID = 1.25A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 3.6? ? ? ? 1.14

Anderen MOSFET... 2N6784JANTXV , 2N6784SM , 2N6785 , 2N6786 , 2N6786JANTX , 2N6786JANTXV , 2N6787 , 2N6787LCC4 , 2N7000 , 2N6788 , 2N6788JANTX , 2N6788JANTXV , 2N6788SM , 2N6789 , 2N6789LCC4 , 2N6789-SM , 2N6790 .

 

 
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