Alle MOSFET. IRF3808 Datenblatt

 

IRF3808 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRF3808

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 330 W

Maximale Drain-Source-Spannung (Vds): 75 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 140 A

Gate-Ladung (Qg): 150 nC

Ausgangswiderstand RDS(on): 0.007 Ohm

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRF3808 Transistor

 

IRF3808 Datasheet (PDF)

1.1. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

IRF3808
IRF3808

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 106A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H

1.2. irf3808l.pdf Size:165K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω Dynamic dv/dt Rating G 175°C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 1.3. irf3808s.pdf Size:161K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007? Dynamic dv/dt Rating G 175C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax D

1.4. irf3808pbf.pdf Size:246K _international_rectifier

IRF3808
IRF3808

PD - 94972A IRF3808PbF HEXFET® Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 140A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe HEXFET ® Power

 1.5. irf3808.pdf Size:131K _international_rectifier

IRF3808
IRF3808

PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.007? Ultra Low On-Resistance G Dynamic dv/dt Rating 175C Operating Temperature ID = 140AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description

Anderen MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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