Alle MOSFET. BS170 Datenblatt

 

BS170 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BS170

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.83 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximaler Drainstrom (Id): 0.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Ausgangswiderstand (Rds): 5 Ohm

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für BS170 Transistor

BS170 PDF doc:

1.1. bs170rev1x.pdf Size:77K _motorola

BS170
BS170

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS170/D TMOS FET Switching NChannel Enhancement BS170 1 DRAIN 2 GATE ? 3 SOURCE MAXIMUM RATINGS 1 2 Rating Symbol Value Unit 3 DrainSource Voltage VDS 60 Vdc CASE 2904, STYLE 30 GateSource Voltage TO92 (TO226AA) Continuous VGS 20 Vdc Nonrepetitive (tp ? 50 s) VGSM 40 Vpk Drain Current(1) ID 0.5 Adc

1.2. bs170_cnv_2.pdf Size:49K _philips

BS170
BS170

DISCRETE SEMICONDUCTORS DATA SHEET BS170 N-channel vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel vertical D-MOS transistor BS170 DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 60 V vertical D-MOS transistor in TO-92 Gate-source volt

1.3. bs170_mmbf170.pdf Size:1298K _fairchild_semi

BS170
BS170

March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state re

1.4. bs170.pdf Size:652K _fairchild_semi

BS170
BS170

April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect High density cell design for low RDS(ON). transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch. cell density, DMOS technology. These products have been designed to minimize on-state resista

1.5. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

BS170
BS170

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Lo

1.6. 2n7000kl_bs170kl.pdf Size:93K _vishay

BS170
BS170

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays, Solenoids, Lam

1.7. bs170g.pdf Size:92K _onsemi

BS170
BS170

BS170G Small Signal MOSFET 500 mA, 60 Volts N-Channel TO-92 (TO-226) Features http://onsemi.com This is a Pb-Free Device* 500 mA, 60 Volts MAXIMUM RATINGS RDS(on) = 5.0 W Rating Symbol Value Unit Drain -Source Voltage VDS 60 Vdc N-Channel Gate-Source Voltage D - Continuous VGS 20 Vdc - Non-repetitive (tp ? 50 ms) VGSM 40 Vpk Drain Current (Note) ID 0.5 Adc G Total Device D

1.8. bs170f.pdf Size:67K _no

BS170

ST3-ANLNACMN O2NC HNEEHNEET B10 S7F M EETADOFT ODVRILMSE C IU3JNAY96 S SE-AUR19 FAUE ETRS *6VlVS 0o tD S *RSN=Ω 5 D( O) D G PRMRI DTI–V ATAKGEA N LM ST3 O2 ASLTMX AI BOUE AIU NS MMRTG. PRMTR SMO VLE UI AAEE YBL AU NT Da-or Vlg VS 6 V rn eoae 0 iSuc t D Cnnosrnurttab2° I 05 m otuu Da CrnaTm=5 . A i i e C 1 D PldriCrn I 3 A ue Da e s nurt D M GtS

1.9. bs170p.pdf Size:15K _no

BS170

N-CHANNEL ENHANCEMENT BS170P MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 60 Volt VDS * RDS(on)=5Ω D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb =25°C ID 270 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS ±20 V Power Dissipati

1.10. hbs170.pdf Size:403K _shantou-huashan

BS170
BS170

 Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance TO-92 While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage,

Anderen MOSFET... BFR30 , BFR31 , BFR84 , BFS28R , BFT46 , BS107P , BS107PT , BS108 , 2SK2996 , BS170F , BS170P , BS250F , BS250P , BS270 , BSN254 , BSN254A , BSP92 .

 


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