Alle MOSFET. H7P1002DL Datenblatt

 

H7P1002DL MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: H7P1002DL

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 30 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 15 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 45 nS

Drain-Kapazität (Cd): 190 pF

Ausgangswiderstand (Rds): 0.105 Ohm

Transistorgehäuse: DPAK

Ersatz (vergleichstyp) für H7P1002DL Transistor

 

H7P1002DL Datasheet (PDF)

1.1. rej03g1601 h7p1002dldsds.pdf Size:131K _renesas

H7P1002DL
H7P1002DL

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Anderen MOSFET... H7N1005DS , H7N1005FM , H7N1005LD , H7N1005LM , H7N1005LS , H7N1009MD90TZ , H7P0601DL , H7P0601DS , APT50M38JLL , H7P1002DS , H7P1006MD90TZ , H8N0801AB , HAT1016R , HAT1020R , HAT1021R , HAT1023R , HAT1024R .

 


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