Alle MOSFET. SI2312 Datenblatt

 

SI2312 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: SI2312

Markierungscode: AC2TF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.75 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 8 V

Maximaler Drainstrom (Id): 4.9 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 1 V

Anstiegszeit (tr): 40 nS

Drain-Kapazität (Cd): 300 pF

Ausgangswiderstand RDS(on): 0.031 Ohm

Transistorgehäuse: SOT233L

Ersatz (vergleichstyp) für SI2312 Transistor

 

SI2312 Datasheet (PDF)

1.1. si2312cds.pdf Size:126K _vishay

SI2312
SI2312

New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)e Qg (Typ.) Definition 0.0318 at VGS = 4.5 V • TrenchFET® Power MOSFET 6a • 100 % Rg Tested 20 0.0356 at VGS = 2.5 V 6a 8.8 nC • Compliant to RoHS Directive 2002/95/EC 0.0414 at VGS = 1.8 V 5.6 APPLI

1.2. si2312bds.pdf Size:213K _vishay

SI2312
SI2312

Si2312BDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.031 at VGS = 4.5 V 5.0 • TrenchFET® Power MOSFET 20 0.037 at VGS = 2.5 V 4.6 7.5 • 100 % Rg Tested 0.047 at VGS = 1.8 V 4.1 • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2

 1.3. si2312ds.pdf Size:85K _vishay

SI2312
SI2312

Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 1.8-V Rated D RoHS Compliant VDS (V) rDS(on) (W) ID (A) Qg (Typ) Pb-free 0.033 @ VGS = 4.5 V 4.9 Available 0.040 @ VGS = 2.5 V 4.4 20 11.2 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1E3 (Lead (Pb)-Free)

1.4. si2312.pdf Size:1882K _htsemi

SI2312
SI2312

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31m? RDS(ON), Vgs@2.5V, Ids@4.5A < 37m? RDS(ON), Vgs@1.8V, Ids@3.9A < 85m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF.

 1.5. si2312ds-3.pdf Size:1696K _kexin

SI2312
SI2312

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 20V ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) 1 2 ● RDS(ON) < 40mΩ (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 51mΩ (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain

1.6. si2312ds.pdf Size:1660K _kexin

SI2312
SI2312

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4 -0.1 ● VDS (V) = 20V 3 ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) ● RDS(ON) < 40mΩ (VGS = 2.5V) 1 2 ● RDS(ON) < 51mΩ (VGS = 1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Abs

1.7. si2312.pdf Size:304K _shenzhen-tuofeng-semi

SI2312
SI2312

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312 PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 20 7.5 0.047 @ VGS = 1.8 V 4.1 (SOT-23) G 1 3 D Ordering Information: Si2312 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top

 


SI2312
  SI2312
  SI2312
  SI2312
 

social 

Liste

Letztes Update

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
Back to Top