Alle MOSFET. XP151A13COMR Datenblatt

 

XP151A13COMR MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: XP151A13COMR

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 1.25 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 8 V

Maximaler Drainstrom (Id): 2.3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 36 nS

Drain-Kapazität (Cd): 115 pF

Ausgangswiderstand RDS(on): 0.085 Ohm

Transistorgehäuse: SOT23

Ersatz (vergleichstyp) für XP151A13COMR Transistor

 

XP151A13COMR Datasheet (PDF)

1.1. xp151a13comr.pdf Size:2261K _htsemi

XP151A13COMR
XP151A13COMR

XP151A13COMR 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.

2.1. xp151a13a0mr-g.pdf Size:306K _update_mosfet

XP151A13COMR
XP151A13COMR

XP151A13A0MR-G ETR1119_003 Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high

2.2. xp151a13a0mr-g.pdf Size:95K _tysemi

XP151A13COMR
XP151A13COMR

Product specification XP151A13A0MR-G Power MOSFET ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package m

 2.3. xp151a13a0mr.pdf Size:358K _shenzhen-tuofeng-semi

XP151A13COMR
XP151A13COMR

Shenzhen Tuofeng Semiconductor Technology Co., Ltd ◆ ■ N-Channel Power MOS FET Applications ◆ ● Notebook PCs DMOS Structure ● Cellular and portable phones ◆ Low On-State Resistance : 0.1Ω (max) ◆ ● On - board power supplies Ultra High-Speed Switching ◆ ● Li - ion battery systems Gate Protect Diode Built-in ◆

Anderen MOSFET... 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , 2P7234A-5 , SI2300 , SI2302 , SI2312 , IRF640N , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 .

 
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