Alle MOSFET. PT8205 Datenblatt

 

PT8205 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: PT8205

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 1.4 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 12 V

Maximaler Drainstrom (Id): 4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 4.8 nS

Drain-Kapazität (Cd): 155 pF

Ausgangswiderstand RDS(on): 0.046 Ohm

Transistorgehäuse: SOT236

Ersatz (vergleichstyp) für PT8205 Transistor

 

PT8205 Datasheet (PDF)

1.1. pt8205a.pdf Size:2146K _htsemi

PT8205
PT8205

PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m? RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Millimete

1.2. pt8205.pdf Size:2427K _htsemi

PT8205
PT8205

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m? RDS(ON), Vgs@4.V, Ids@4.3A ? 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 Millimeter Millimeter REF. REF. Min. Ma

 

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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