Alle MOSFET. CEB02N65G Datenblatt

 

CEB02N65G MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: CEB02N65G

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 60 W

Maximale Drain-Source-Spannung (Vds): 650 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 11 nS

Drain-Kapazität (Cd): 75 pF

Ausgangswiderstand RDS(on): 5.5 Ohm

Transistorgehäuse: TO263

Ersatz (vergleichstyp) für CEB02N65G Transistor

 

 

CEB02N65G Datasheet (PDF)

1.1. cep02n65g ceb02n65g cef02n65g.pdf Size:393K _cet

CEB02N65G
CEB02N65G

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65G 650V 5.5? 2A 10V CEB02N65G 650V 5.5? 2A 10V CEF02N65G 650V 5.5? 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)

2.1. cep02n65a ceb02n65a cef02n65a.pdf Size:391K _cet

CEB02N65G
CEB02N65G

CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5? 1.3A 10V CEB02N65A 650V 10.5? 1.3A 10V CEF02N65A 650V 10.5? 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES

 3.1. cep02n6g ceb02n6g cef02n6g.pdf Size:393K _cet

CEB02N65G
CEB02N65G

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6G 600V 5? 2.2A 10V CEB02N6G 600V 5? 2.2A 10V CEF02N6G 600V 5? 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220

3.2. cep02n6a ceb02n6a cef02n6a.pdf Size:354K _cet

CEB02N65G
CEB02N65G

CEP02N6A/CEB02N6A CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N6A 600V 8.5? 1.4A 10V CEB02N6A 600V 8.5? 1.4A 10V CEF02N6A 600V 8.5? 1.4A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK)

Anderen MOSFET... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

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