Alle MOSFET. AP4226GM Datenblatt

 

AP4226GM MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: AP4226GM

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 2 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Gate-Source-Schwellspannung Vgs(th): 3 V

Maximaler Drainstrom (Id): 8.2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 8 nS

Drain-Kapazität (Cd): 320 pF

Ausgangswiderstand (Rds): 0.018 Ohm

Transistorgehäuse: SO8

Ersatz (vergleichstyp) für AP4226GM Transistor

 

AP4226GM Datasheet (PDF)

1.1. ap4226gm.pdf Size:71K _a-power

AP4226GM
AP4226GM

AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of

1.2. ap4226gm-hf.pdf Size:57K _a-power

AP4226GM
AP4226GM

AP4226GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance BVDSS 30V D2 D2 D1 ▼ Simple Drive Requirement RDS(ON) 18mΩ D1 ▼ Dual N MOSFET Package ID 8.2A G2 S2 ▼ RoHS Compliant G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi

4.1. ap4226agm.pdf Size:206K _a-power

AP4226GM
AP4226GM

AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

4.2. ap4226bgm-hf.pdf Size:98K _a-power

AP4226GM
AP4226GM

AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best com

4.3. ap4226agm-hf.pdf Size:94K _a-power

AP4226GM
AP4226GM

AP4226AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-Resistance BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 18mΩ ▼ Dual N MOSFET Package ID 8.7A ▼ Halogen Free & RoHS Compliant Product D2 D2 D1 Description D1 Advanced Power MOSFETs from APEC provide the G2 designer with the best combination of fast switching,

Anderen MOSFET... AP40T10GI-HF , AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , 2SK1058 , AP4228GM , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF .

 


AP4226GM
  AP4226GM
  AP4226GM
  AP4226GM
 
AP4226GM
  AP4226GM
  AP4226GM
 

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