Alle MOSFET. AP6618GM-HF Datenblatt

 

AP6618GM-HF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: AP6618GM-HF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 2.5 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 7 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 5.2 nS

Drain-Kapazität (Cd): 150 pF

Ausgangswiderstand (Rds): 0.03 Ohm

Transistorgehäuse: SO8

Ersatz (vergleichstyp) für AP6618GM-HF Transistor

 

AP6618GM-HF Datasheet (PDF)

1.1. ap6618gm-hf.pdf Size:94K _a-power

AP6618GM-HF
AP6618GM-HF

AP6618GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D D D Ў Fast Switching Characteristic RDS(ON) 30m? D Ў Surface Mount Package ID 7A G S Ў Halogen Free & RoHS Compliant Product S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast sw

Anderen MOSFET... AP60T03GS , AP60T06GJ-HF , AP60T06GP-HF , AP60T10GI-HF , AP60T10GP , AP60T10GS , AP62T03GH , AP62T03GJ , J111 , AP6677GH , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AP6679GI-HF , AP6679GJ-HF .

 


AP6618GM-HF
  AP6618GM-HF
  AP6618GM-HF
  AP6618GM-HF
 
AP6618GM-HF
  AP6618GM-HF
  AP6618GM-HF
 

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