Alle MOSFET. 2N5397 Datenblatt

 

2N5397 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: 2N5397

Typ von Feldeffekttransistors: JFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.3 W

Maximale Drain-Source-Spannung (Vds): 25 V

Maximale Gate-Source-Spannung (Vgs): 6 V

Maximaler Drainstrom (Id): 0.03 A

Transistorgehäuse: TO-72

Ersatz (vergleichstyp) für 2N5397 Transistor

 

2N5397 Datasheet (PDF)

1.1. 2n5397 2n5398.pdf Size:91K _interfet

2N5397

Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Low-Noise Reverse Gate Source & Reverse Gate Drain Voltage 25 V ? High Power Gain Drain Source Voltage 25 V ? High Transconductance Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW ? Mixers Power D

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

 
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