Alle MOSFET. 10N80 Datenblatt

 

10N80 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: 10N80

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 240 W

Maximale Drain-Source-Spannung (Vds): 800 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 130 nS

Drain-Kapazität (Cd): 130 pF

Ausgangswiderstand RDS(on): 0.9 Ohm

Transistorgehäuse: TO-3P_TO-230_TO-220F2

Ersatz (vergleichstyp) für 10N80 Transistor

 

10N80 Datasheet (PDF)

1.1. tmp10n80 tmpf10n80.pdf Size:609K _update

10N80
10N80

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A  Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

1.2. stf10n80k5.pdf Size:571K _update

10N80
10N80

STF10N80K5 N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STF10N80K5 800 V 0.600 Ω 9 A 30 W • Industry’s best RDS(on) 3 2 • Industry’s best figure of merit (FoM) 1 • Ultra-low gate charge TO-220FP • 100% avalanche tested • Zener-protected Applications F

 1.3. stf10n80k5.pdf Size:571K _upd

10N80
10N80

STF10N80K5 N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STF10N80K5 800 V 0.600 Ω 9 A 30 W • Industry’s best RDS(on) 3 2 • Industry’s best figure of merit (FoM) 1 • Ultra-low gate charge TO-220FP • 100% avalanche tested • Zener-protected Applications F

1.4. msf10n80a.pdf Size:1058K _upd-mosfet

10N80
10N80

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Int

 1.5. fdbl0210n80.pdf Size:379K _upd-mosfet

10N80
10N80

April 2015 FDBL0210N80 N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.0 mΩ Features Typical RDS(on) = 1.5 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Applications Industrial Motor Drive G Industrial Power Supply Industrial Automations Battery Operated tools S Battery Protection For current package d

1.6. msf10n80.pdf Size:841K _upd-mosfet

10N80
10N80

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • 100% EAS Test • Rugged Gate Oxide Techn

1.7. msw10n80.pdf Size:412K _upd-mosfet

10N80
10N80

Preliminary MSW10N80 800V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features • RDS(on) (typ 0.65 Ω )@VGS=10V • Gate Charge (Typical 55nC) • Improved dv/dt Capability, High Ru

1.8. ssh10n80.pdf Size:263K _upd-mosfet

10N80
10N80



1.9. fqa10n80c.pdf Size:800K _upd-mosfet

10N80
10N80

September 2006 ® QFET FQA10N80C 800V N-Channel MOSFET Features Description • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 44 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

1.10. tman10n80.pdf Size:493K _upd-mosfet

10N80
10N80

TMAN10N80 VDSS = 880 V @Tjmax Features ID = 10A  Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D G S Device Package Marking Remark TMAN10N80 TO-3P TMAN10N80 RoHS Absolute Maximum Ratings Parameter Symbol TMAN10N80 Unit Drain-Source Voltage VDS 900 V Gate-

1.11. fmv10n80e.pdf Size:364K _upd-mosfet

10N80
10N80

http://www.fujielectric.com/products/semiconductor/ FMV10N80E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching G

1.12. fqa10n80.pdf Size:675K _upd-mosfet

10N80
10N80

September 2000 TM QFET FQA10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.8A, 800V, RDS(on) = 1.05Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 55 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tail

1.13. hfs10n80.pdf Size:210K _update_mosfet

10N80
10N80

Dec 2010 BVDSS = 800 V RDS(on) typ = 0.92 HFS10N80 ID = 9.4 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Unrivalled Gate Charge : 58 nC (Typ ) E

1.14. cs10n80a8d.pdf Size:544K _update_mosfet

10N80
10N80

Silicon N-Channel Power MOSFET R ○ CS10N80 A8D General Description: VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.15. cs10n80fa9d.pdf Size:544K _update_mosfet

10N80
10N80

Silicon N-Channel Power MOSFET R ○ CS10N80F A9D General Description: VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.16. hfh10n80.pdf Size:207K _update_mosfet

10N80
10N80

Dec 2005 BVDSS = 800 V RDS(on) typ = 0.92 HFH10N80 ID = 10 A 800V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Unrivalled Gate Charge : 58 nC (Typ ) Exte

1.17. hfp10n80.pdf Size:207K _update_mosfet

10N80
10N80

Dec 2010 BVDSS = 800 V RDS(on) typ HFP10N80 ID = 9.4 A 800V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Low

1.18. tsm10n80ci tsm10n80cz.pdf Size:419K _update_mosfet

10N80
10N80

 TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 800 1.05 @ VGS =10V 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr

1.19. fqa10n80c f109.pdf Size:806K _fairchild_semi

10N80
10N80

August 2007 QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description 10A, 800V, RDS(on) = 1.1? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 44 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switc

1.20. fqaf10n80.pdf Size:700K _fairchild_semi

10N80
10N80

TM QFET FQAF10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 55 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to • Fa

1.21. ssf10n80a.pdf Size:577K _samsung

10N80
10N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 0.746 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.22. ssh10n70 ssh10n80.pdf Size:294K _samsung

10N80
10N80

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

1.23. ssh10n80a.pdf Size:211K _samsung

10N80
10N80

SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 0.95 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

1.24. 10n80.pdf Size:225K _utc

10N80
10N80

UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) < 1.1? @VGS = 10 V * Ul

1.25. g10n80bf.pdf Size:1442K _goford

10N80
10N80

GOFORD G10N80BF N-Channel MOSFET VDSS RDS(on)(Typ) ID (Max) 800V 0.8Ω 10A Applications: • ATX Power • LCD Panel Power Features: G • RoHS Compliant & Halogen Free DS TO-220F • Low ON Resistance Packages Not to Scale • Low Gate Charge • ESD Capability Improved Absolute Maximum Ratings Tc= 25 unless otherwise specified Symbol Parameter TO-220F Units VDSS Dra

1.26. brf10n80.pdf Size:869K _blue-rocket-elect

10N80
10N80

BRF10N80(BRCS10N80FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited f

1.27. cs10n80 and.pdf Size:304K _crhj

10N80
10N80

Silicon N-Channel Power MOSFET R ○ CS10N80 AND General Description: VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.28. cs10n80 a8d.pdf Size:547K _crhj

10N80
10N80

Silicon N-Channel Power MOSFET R ○ CS10N80 A8D General Description: VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.29. cs10n80f a9d.pdf Size:546K _crhj

10N80
10N80

Silicon N-Channel Power MOSFET R ○ CS10N80F A9D General Description: VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.30. cm10n80p.pdf Size:124K _jdsemi

10N80
10N80

R C1N0 M08P 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆800V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于高效开关电源、适配器 等功率开关电路 2 .主要特点 1 开关速度快 通态电阻小,输入电容小 2 3 3 .封

1.31. msf10n80a.pdf Size:1058K _bruckewell

10N80
10N80

MSF10N80A 800V N-Channel MOSFET Description The MSF10N80A is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Int

1.32. msf10n80.pdf Size:841K _bruckewell

10N80
10N80

MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • 100% EAS Test • Rugged Gate Oxide Techn

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
Back to Top

 


10N80
  10N80
  10N80
  10N80
 

social 

Liste

Letztes Update

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

 
Back to Top