Alle MOSFET. FQP10N50CF Datenblatt

 

FQP10N50CF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQP10N50CF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 143 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 80 nS

Drain-Kapazität (Cd): 177 pF

Ausgangswiderstand RDS(on): 0.61 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für FQP10N50CF Transistor

 

FQP10N50CF Datasheet (PDF)

1.1. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

FQP10N50CF
FQP10N50CF

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 16pF) This advanced technology has been espe

4.1. fqp10n20ctstu.pdf Size:873K _fairchild_semi

FQP10N50CF
FQP10N50CF

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor

4.2. fqp10n20.pdf Size:769K _fairchild_semi

FQP10N50CF
FQP10N50CF

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been

 4.3. fqp10n20c fqpf10n20c.pdf Size:875K _fairchild_semi

FQP10N50CF
FQP10N50CF

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailored to Fast

4.4. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi

FQP10N50CF
FQP10N50CF

April 2007 ® QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 44 nC) DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especiall

 4.5. fqp10n60cf.pdf Size:933K _fairchild_semi

FQP10N50CF
FQP10N50CF

February 2007 TM FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description • 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 44 nC) DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especia

4.6. fqp10n60.pdf Size:59K _fairchild_semi

FQP10N50CF

TIGER ELECTRONIC CO.,LTD Product specification 600V N-Channel MOSFET FQP10N60 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t

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