Alle MOSFET. 2N5640 Datenblatt

 

2N5640 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: 2N5640

Typ von Feldeffekttransistors: JFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.35 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximaler Drainstrom (Id): 0.05 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 10 nS

Ausgangswiderstand RDS(on): 100 Ohm

Transistorgehäuse: TO92_TO226AA

Ersatz (vergleichstyp) für 2N5640 Transistor

 

 

2N5640 Datasheet (PDF)

1.1. 2n5640.pdf Size:126K _motorola

2N5640
2N5640

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5640/D JFETs Switching N–Channel — Depletion 2N5640 1 DRAIN 3 1 GATE 2 3 2 SOURCE CASE 29–04, STYLE 5 TO–92 (TO–226AA) Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Reverse Gate–Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissip

5.1. 2n5643.pdf Size:14K _advanced-semi

2N5640

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C B E E FEATURES: OC B Minimum Gain = 7.6 dB Output Power = 40 W I D H Omnigold Metalization System J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 5.0 A MINIMUM MA

5.2. 2n5641 2n5642 2n5643.pdf Size:182K _ssm

2N5640
2N5640

Anderen MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

Back to Top

 


2N5640
  2N5640
  2N5640
  2N5640
 

social 

Liste

Letztes Update

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

Back to Top