Alle MOSFET. IRFS830B Datenblatt

 

IRFS830B MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: IRFS830B

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 38 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 40 nS

Drain-Kapazität (Cd): 76 pF

Ausgangswiderstand (Rds): 1.5 Ohm

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für IRFS830B Transistor

 

IRFS830B Datasheet (PDF)

1.1. irf830b irfs830b.pdf Size:888K _fairchild_semi

IRFS830B
IRFS830B

November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to

3.1. irfs830a.pdf Size:499K _samsung

IRFS830B
IRFS830B

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V ? Lower RDS(ON) : 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

5.1. irfs820a.pdf Size:502K _samsung

IRFS830B
IRFS830B

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.2. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

IRFS830B



5.3. irfs840a.pdf Size:511K _samsung

IRFS830B
IRFS830B

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

Anderen MOSFET... FTD04N65C , FTU06N70C , FTD06N70C , 2SK1487 , SSP7N60B , SSS7N60B , SSM40N03P , IRF830B , IRFZ44N , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 , AOD436 , BSN304 , J309G .

 


IRFS830B
  IRFS830B
  IRFS830B
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IRFS830B
  IRFS830B
  IRFS830B
 

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