Alle MOSFET. BRB80N10 Datenblatt

 

BRB80N10 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: BRB80N10

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 131 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 80 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 10 nS

Drain-Kapazität (Cd): 250 pF

Ausgangswiderstand (Rds): 0.015 Ohm

Transistorgehäuse: TO263

Ersatz (vergleichstyp) für BRB80N10 Transistor

 

BRB80N10 Datasheet (PDF)

1.1. brb80n10.pdf Size:881K _blue-rocket-elect

BRB80N10
BRB80N10

BRB80N10(BRCS80N10B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

4.1. brb80n08.pdf Size:751K _blue-rocket-elect

BRB80N10
BRB80N10

BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

4.2. brb80n06.pdf Size:1667K _blue-rocket-elect

BRB80N10
BRB80N10

BRB80N06(BRCS80N06B) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-263 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features R 小,门电荷低,C 小,开关速度快。 DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. 用途 / Applications 用于低压电路如:汽车电路、DC/DC 转换、便携

Anderen MOSFET... JCS2N60F , SI4963DY , BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , IRF9530 , BRD15P06 , BRD17N10 , BRD18N06 , BRD18P06 , BRD1N60 , BRD20N03 , BRD2N60 , BRD2N65 .

 


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