Alle MOSFET. P0465CT Datenblatt

 

P0465CT MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P0465CT

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 71 W

Maximale Drain-Source-Spannung (Vds): 650 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 60 nS

Drain-Kapazität (Cd): 49 pF

Ausgangswiderstand (Rds): 2.6 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für P0465CT Transistor

 

P0465CT Datasheet (PDF)

1.1. p0465ctf-s.pdf Size:789K _unikc

P0465CT
P0465CT

P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7Ω @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C

1.2. p0465ct.pdf Size:434K _unikc

P0465CT
P0465CT

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6mΩ @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

4.1. p0465cs.pdf Size:428K _unikc

P0465CT
P0465CT

P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6mΩ @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

4.2. p0465ci.pdf Size:474K _unikc

P0465CT
P0465CT

P0465CI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

4.3. p0465cis.pdf Size:731K _unikc

P0465CT
P0465CT

P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Cur

4.4. p0465cd.pdf Size:422K _unikc

P0465CT
P0465CT

P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

Anderen MOSFET... P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS , IRF2807 , P0465CTF , P0465CTFS , P0470ATF , P0470ATFS , P0502CEA , P0510AT , P0550AD , P0550AT .

 


P0465CT
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P0465CT
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