Alle MOSFET. PZD502CMA Datenblatt

 

PZD502CMA MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PZD502CMA

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.6 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 8 V

Maximaler Drainstrom (Id): 1 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 18 nS

Drain-Kapazität (Cd): 16 pF

Ausgangswiderstand (Rds): 0.45 Ohm

Transistorgehäuse: SOT23S

Ersatz (vergleichstyp) für PZD502CMA Transistor

 

PZD502CMA Datasheet (PDF)

1.1. pzd502cma.pdf Size:415K _unikc

PZD502CMA
PZD502CMA

PZD502CMA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 450mΩ @VGS = 4.5V 20V 1A SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 TA = 25 ° C 1 ID Continuous Drain Current TA = 70 ° A C 0.7 IDM 5 Pulsed

3.1. pzd502cyb.pdf Size:539K _unikc

PZD502CMA
PZD502CMA

PZD502CYB N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 450mΩ @VGS = 4.5V 0.7A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 TA = 25 ° C 0.7 ID Continuous Drain Current TA = 70 ° A C 0.6 IDM 2 Pulsed

Anderen MOSFET... P0550BD , P0550BT , P0550ED , P0550EI , P0550ETF , P0550ETFS , P057AAT , PZC502FYB , J310 , PZD502CYB , PT530BA , PT542BA , PD632BA , PD636BA , PD648BA , PD696BA , PD6A8BA .

 


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