Alle MOSFET. PD570BA Datenblatt

 

PD570BA MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: PD570BA

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 40 W

Maximale Drain-Source-Spannung (Vds): 40 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 49 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 36 nS

Drain-Kapazität (Cd): 149 pF

Ausgangswiderstand (Rds): 0.01 Ohm

Transistorgehäuse: TO252

Ersatz (vergleichstyp) für PD570BA Transistor

 

PD570BA Datasheet (PDF)

1.1. pd570ba.pdf Size:416K _unikc

PD570BA
PD570BA

PD570BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 40V 49A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 TC = 25 ° C 49 ID Continuous Drain Current TC = 100 ° C 31 A IDM 100 Pulsed Drain Current1

5.1. pd57006.pdf Size:277K _st

PD570BA
PD570BA

PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) DESCRIPTION The PD57006 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Effect RF pow

5.2. pd57006-01.pdf Size:39K _st

PD570BA
PD570BA

PD57006-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW LEADLESS PLASTIC PACKAGE PowerFLAT(5x5) DESCRIPTION ORDER CODE BRANDING The PD57006-01 is a common source N-Channel, PD57006-01 PD57006-01 enhancement-mode lat

5.3. pd57070.pdf Size:296K _st

PD570BA
PD570BA

PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) ORDER CODE BRANDING DESCRIPTION PD57070 PD57070 The PD57070 is a common source N-Channel, enhancement-mode lateral F

5.4. pd57002-e pd57002s-e.pdf Size:368K _st

PD570BA
PD570BA

PD57002-E PD57002S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 2 W with 15dB gain @ 960 MHz / 28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor

5.5. pd57045-e pd57045s-e.pdf Size:487K _st

PD570BA
PD570BA

PD57045-E PD57045S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 45 W with 13dB gain @ 945 MHz / 28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor

5.6. pd57002-01.pdf Size:39K _st

PD570BA
PD570BA

PD57002-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW LEADLESS PLASTIC PACKAGE PowerFLAT(5x5) DESCRIPTION ORDER CODE BRANDING The PD57002-01 is a common source N-Channel, PD57002-01 PD57002-01 enhancement-mode l

5.7. pd57060s-e.pdf Size:514K _st

PD570BA
PD570BA

PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 60 W with 14.3dB gain@ 945 MHz/28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed

5.8. pd57006-e pd57006s-e.pdf Size:506K _st

PD570BA
PD570BA

PD57006-E PD57006S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 6 W with 15dB gain @ 945 MHz / 28 V New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor

5.9. pd57002.pdf Size:131K _st

PD570BA
PD570BA

PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) ORDER CODE BRANDING DESCRIPTION PD57002 PD57002 The PD57002 is a common source N-Channel, en- hancement-mode lateral

5.10. pd57018-e.pdf Size:938K _st

PD570BA
PD570BA

PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is desig

5.11. pd57018-e pd57018s-e.pdf Size:938K _st

PD570BA
PD570BA

PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

5.12. pd57070-e pd57070s-e.pdf Size:517K _st

PD570BA
PD570BA

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 70 W with 14.7dB gain @945 MHz/28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

5.13. pd57030-e pd57030s-e.pdf Size:500K _st

PD570BA
PD570BA

PD57030-E PD57030S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 30 W with 14dB gain @ 945 MHz / 28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor

5.14. pd57060.pdf Size:305K _st

PD570BA
PD570BA

PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF (formed lead) NEW RF PLASTIC PACKAGE ORDER CODE BRANDING DESCRIPTION PD57060 PD57060 The PD57060S is a common source N-Channel, enhancement-mode latera

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