Alle MOSFET. P0903BDG Datenblatt

 

P0903BDG MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P0903BDG

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 49 W

Maximale Drain-Source-Spannung (Vds): 25 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 56 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 25 nS

Drain-Kapazität (Cd): 300 pF

Ausgangswiderstand (Rds): 0.0095 Ohm

Transistorgehäuse: TO252

Ersatz (vergleichstyp) für P0903BDG Transistor

 

P0903BDG Datasheet (PDF)

1.1. p0903bdg.pdf Size:532K _unikc

P0903BDG
P0903BDG

P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5mΩ @VGS = 10V 25V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 TC= 25 ° C 56 ID Continuous Drain Current TC= 100 ° C 35 A IDM 160 Pulsed Drain Current1

3.1. p0903bd.pdf Size:521K _unikc

P0903BDG
P0903BDG

P0903BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9mΩ @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC= 25 ° C 57 ID Continuous Drain Current TC= 100 ° C 36 A IDM 160 Pulsed Drain Current1 I

3.2. p0903bda.pdf Size:493K _unikc

P0903BDG
P0903BDG

P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9mΩ @VGS = 10V 30V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC= 25 ° C 56 ID Continuous Drain Current TC= 100 ° C 35 A IDM 160 Pulsed Drain Current1

3.3. p0903bdb.pdf Size:465K _unikc

P0903BDG
P0903BDG

P0903BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9mΩ @VGS = 10V 30V 59A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC= 25 ° C 59 ID Continuous Drain Current TC= 100 ° C 37 A IDM 150 Pulsed Drain Current1

3.4. p0903bdl.pdf Size:455K _unikc

P0903BDG
P0903BDG

P0903BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5mΩ @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 TC = 25 ° C 56 ID Continuous Drain Current TC = 100 ° C 35 A IDM 160 Pulsed Drain Current

Anderen MOSFET... P0808ATG , P082ABD8 , P0850AT , P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB , 40673 , P0903BDL , P0603BD , P0603BDB , P0603BDD , P0603BDF , P0603BDG , P0603BDL , P0603BEAD .

 


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