Alle MOSFET. P9006ESG Datenblatt

 

P9006ESG MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P9006ESG

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 54 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 18 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 15 nS

Drain-Kapazität (Cd): 99 pF

Ausgangswiderstand (Rds): 0.09 Ohm

Transistorgehäuse: TO263

Ersatz (vergleichstyp) für P9006ESG Transistor

 

P9006ESG Datasheet (PDF)

1.1. p9006esg.pdf Size:456K _unikc

P9006ESG
P9006ESG

P9006ESG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90mΩ @VGS = 10V -60V -18A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 TC = 25 ° C -18 ID Continuous Drain Current TC = 100 ° C -12 A IDM -48 Pulsed Drain

4.1. mtp9006e3.pdf Size:250K _cystek

P9006ESG
P9006ESG

Spec. No. : C733E3 Issued Date : 2010.07.09 CYStech Electronics Corp. Revised Date : Page No. : 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP9006E3 ID -10A 95mΩ Features RDSON(MAX) • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 G:Gate D:Drain S:Source

4.2. p9006edg.pdf Size:463K _unikc

P9006ESG
P9006ESG

P9006EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90mΩ @VGS = -10V -60V -15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 TC = 25 ° C -15 ID Continuous Drain Current TC = 100 ° C -10 A IDM -50 Pulsed Drain C

4.3. p9006el.pdf Size:365K _unikc

P9006ESG
P9006ESG

P9006EL P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ @VGS = 10V -4A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C -4 ID Continuous Drain Current1 TA = 100 ° C -2.7 A IDM -30 Pulsed Drain Current2 IAS Avalanche Current

4.4. p9006ei.pdf Size:361K _unikc

P9006ESG
P9006ESG

P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ @VGS = -10V -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TC = 25 ° C -18 ID Continuous Drain Current1 TC = 100 ° C -11 A IDM -50 Pulsed Drain Current2 IAS Avalanche Current

4.5. p9006etf.pdf Size:365K _unikc

P9006ESG
P9006ESG

P9006ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60 90mΩ @VGS = 10V -15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 TC = 25 ° C -15 ID Continuous Drain Current1 TC = 100 ° C -9.5 A IDM -60 Pulsed Drain

4.6. p9006evg.pdf Size:489K _unikc

P9006ESG
P9006ESG

P9006EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90mΩ @VGS = -10V -4.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) ( ) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 TA = 25 °C -4.5 ID Continuous Drain Current TA = 70 °C A -3.5 IDM -20 Pulsed Drain

Anderen MOSFET... P06B03LVG , P06P03LCG , P06P03LCGA , P06P03LDG , P06P03LVG , P9006EDG , P9006EI , P9006EL , 2N7000 , P9006ETF , P9006EVG , P0703BD , P0703ED , P0703EV , P0765ATF , P0765GTF , P0765GTFS .

 


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