Alle MOSFET. P0765ATF Datenblatt

 

P0765ATF MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P0765ATF

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 52 W

Maximale Drain-Source-Spannung (Vds): 650 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 7 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 50 nS

Drain-Kapazität (Cd): 153 pF

Ausgangswiderstand (Rds): 1.5 Ohm

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für P0765ATF Transistor

 

P0765ATF Datasheet (PDF)

1.1. p0765atf.pdf Size:432K _unikc

P0765ATF
P0765ATF

P0765ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 1.5Ω @VGS = 10V 7A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 7 ID Continuous Drain Current2 TC = 100 ° C 4.2 A IDM 28 Pulsed Drain Curren

5.1. p0765gtf-s.pdf Size:502K _unikc

P0765ATF
P0765ATF

P0765GTF / P0765GTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.5Ω @VGS = 10V 650V 7A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 7 ID Continuous Drain Current2 TC = 100 ° C 4 A IDM

Anderen MOSFET... P9006EI , P9006EL , P9006ESG , P9006ETF , P9006EVG , P0703BD , P0703ED , P0703EV , IRF3710 , P0765GTF , P0765GTFS , P0770EI , P0770EIS , P0770ETF , P0770ETFS , P0780ATF , P0780ATFS .

 


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