Alle MOSFET. P1003EK Datenblatt

 

P1003EK MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P1003EK

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 62.5 W

Maximale Drain-Source-Spannung (Vds): 30 V

Maximale Gate-Source-Spannung (Vgs): 25 V

Maximaler Drainstrom (Id): 30 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 44 nS

Drain-Kapazität (Cd): 566 pF

Ausgangswiderstand (Rds): 0.0105 Ohm

Transistorgehäuse: PDFN5X6P

Ersatz (vergleichstyp) für P1003EK Transistor

 

P1003EK Datasheet (PDF)

1.1. p1003ek.pdf Size:518K _unikc

P1003EK
P1003EK

P1003EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10.5mΩ @VGS = -10V -30V -30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TC = 25 ° C(Package Limited) -30 TC = 25 ° ID C (Silicon Limited) Continuou

4.1. p1003evg.pdf Size:370K _unikc

P1003EK
P1003EK

P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 10.5mΩ @VGS = -10V -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TA = 25 ° C -13 ID Continuous Drain Current TA = 70 ° C -9 A IDM -50 Pulsed Drain C

5.1. ap1003bst.pdf Size:158K _a-power

P1003EK
P1003EK

AP1003BST Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lead-Free Package D BVDSS 30V ▼ Low Conductance Loss RDS(ON) 4.7mΩ ▼ Low Profile ( < 0.7mm ) ID 17.3A G S Description The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and

5.2. p1003bdf.pdf Size:461K _unikc

P1003EK
P1003EK

P1003BDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.8mΩ @VGS = 10V 30V 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TC= 25 ° C 62 ID Continuous Drain Current2 TC= 100 ° C 39 A IDM 120 Pulsed Drain Current1,2 IAS Avalanche

5.3. p1003bk.pdf Size:445K _unikc

P1003EK
P1003EK

P1003BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10.5mΩ @VGS = 10V 30V 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC = 25 ° C 30 (Package Limited) ID Continuous Drain Current TC = 25 ° C(Silicon Limited)

Anderen MOSFET... P0925AD , P0925BTF , P092ABD , P0950ETF , P0950ETFS , P0990AU , P1003BDF , P1003BK , IRF1010E , P1003EVG , P1004BD , P1004BS , P1004HV , P1006BD , P1006BIS , P1006BK , P1006BT .

 


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