Alle MOSFET. P1006BTFS Datenblatt

 

P1006BTFS MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P1006BTFS

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 48 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 47 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 32 nS

Drain-Kapazität (Cd): 224 pF

Ausgangswiderstand (Rds): 0.01 Ohm

Transistorgehäuse: TO220FS

Ersatz (vergleichstyp) für P1006BTFS Transistor

 

P1006BTFS Datasheet (PDF)

2.1. p1006btf-s.pdf Size:825K _unikc

P1006BTFS
P1006BTFS

P1006BTF / P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 TC= 25 ° C 47 ID Continuous Drain Current TC= 100 ° C 29 A IDM 150

3.1. p1006bt.pdf Size:477K _unikc

P1006BTFS
P1006BTFS

P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 TC= 25 ° C 61 ID Continuous Drain Current2 TC= 100 ° C 39 A IDM 150 Pulsed Drain Current1

4.1. p1006bis.pdf Size:707K _unikc

P1006BTFS
P1006BTFS

P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V TC= 25 ° C 66 ID Continuous Drain Current2 TC= 100 ° C 42 A IDM 150 Pulsed Drain Cur

4.2. p1006bk.pdf Size:429K _unikc

P1006BTFS
P1006BTFS

P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 43A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Tc = 25 ° C 43 ID Continuous Drain Current3 Tc = 100 ° C 27 IDM 120 Pulsed Drain Curren

4.3. p1006bd.pdf Size:731K _unikc

P1006BTFS
P1006BTFS

P1006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V TC = 25 ° C 66 ID Continuous Drain Current2 TC = 100 ° C 42 A IDM 150 Pulsed Drain Curren

Anderen MOSFET... P1004BD , P1004BS , P1004HV , P1006BD , P1006BIS , P1006BK , P1006BT , P1006BTF , IRFP260N , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS , P1065AT , P1065ATF , P106AAT .

 


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