Alle MOSFET. P1065AT Datenblatt

 

P1065AT MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: P1065AT

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 113 W

Maximale Drain-Source-Spannung (Vds): 650 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 50 nS

Drain-Kapazität (Cd): 137 pF

Ausgangswiderstand (Rds): 0.75 Ohm

Transistorgehäuse: TO220

Ersatz (vergleichstyp) für P1065AT Transistor

 

P1065AT Datasheet (PDF)

1.1. p1065atf.pdf Size:470K _unikc

P1065AT
P1065AT

P1065ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75Ω @VGS = 10V 10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 10 ID Continuous Drain Current2 TC = 100 ° C 6 A IDM 35 Pulsed Drain Curre

1.2. p1065at.pdf Size:343K _unikc

P1065AT
P1065AT

P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 0.75Ω @VGS = 10V 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 10 ID Continuous Drain Current2 TC = 100 ° A C 5 IDM 30 Pulsed Drain Current1

Anderen MOSFET... P1006BT , P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS , J113 , P1065ATF , P106AAT , P1070ATF , P1070ATFS , P1103BEA , P1103BVG , P117AATX , P1203BD .

 


P1065AT
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