Alle MOSFET. IRF2807S Datenblatt

 

IRF2807S MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRF2807S

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 200 W

Maximale Drain-Source-Spannung (Vds): 75 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 82 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 106.7 nC

Ausgangswiderstand RDS(on): 0.013 Ohm

Transistorgehäuse: D2PAK

Ersatz (vergleichstyp) für IRF2807S Transistor

 

 

IRF2807S Datasheet (PDF)

1.1. irf2807s.pdf Size:124K _international_rectifier

IRF2807S
IRF2807S

PD - 94170 IRF2807S IRF2807L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

1.2. irf2807lpbf irf2807spbf.pdf Size:272K _international_rectifier

IRF2807S
IRF2807S

PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175°C Operating Temperature l Fast Switching RDS(on) = 13mΩ l Fully Avalanche Rated G l Lead-Free ID = 82A‡ Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

 3.1. irf2807.pdf Size:207K _international_rectifier

IRF2807S
IRF2807S

PD - 91517 IRF2807 HEXFET Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

3.2. irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Size:399K _international_rectifier

IRF2807S
IRF2807S

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mΩ G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techni

 3.3. irf2807pbf.pdf Size:233K _international_rectifier

IRF2807S
IRF2807S

PD - 94970A IRF2807PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 75V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 13mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

3.4. irf2807z.pdf Size:173K _international_rectifier

IRF2807S
IRF2807S

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

Anderen MOSFET... IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF9530 , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 .

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