Alle MOSFET. APM9953K Datenblatt

 

APM9953K MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: APM9953K

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 2 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 36 nS

Drain-Kapazität (Cd): 120 pF

Ausgangswiderstand (Rds): 0.1 Ohm

Transistorgehäuse: SOP8

Ersatz (vergleichstyp) für APM9953K Transistor

 

APM9953K Datasheet (PDF)

1.1. apm9953k.pdf Size:138K _anpec

APM9953K
APM9953K

APM9953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 • -20V/-3A , D1 D2 D2 RDS(ON)=76mΩ(typ.) @ VGS=-10V RDS(ON)=93mΩ(typ.) @ VGS=-4.5V S1 G1 • Super High Dense Cell Design • • • • S2 G2 • Reliable and Rugged • • • • Top View of SOP - 8 • Lead Free Available (RoHS Compliant) • • • • (1) (3) S1 S2 Applicat

3.1. apm9953.pdf Size:253K _anpec

APM9953K
APM9953K

APM9953 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-3A , RDS(ON)=75mΩ(typ.) @ VGS=-10V S1 1 8 D1 RDS(ON)=90mΩ(typ.) @ VGS=-4.5V G1 2 7 D1 • Super High Dense Cell Design for Extremely • • • • S2 3 6 D2 Low RDS(ON) G2 45 D2 • Reliable and Rugged • • • • • SOP-8 Package • • • • SO - 8 S1 S2 Applications G1 G2

4.1. apm9950k.pdf Size:232K _anpec

APM9953K
APM9953K

APM9950K Dual N-Channel Enhancement Mode MOSFET Features Pin Configuration D1 D1 60V/8A, D2 D2 RDS(ON)=18.5mΩ (typ.) @ VGS=10V RDS(ON)=26mΩ (typ.) @ VGS=4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (8) (7) (6) (5) D1 D1 D2 D2 (RoHS Compliant) Applications (2) (4) G1 G2 Power Management i

Anderen MOSFET... 2SK3082S , APM9945K , APM9946J , APM9946K , APM9948J , APM9948K , APM9950K , APM9953 , 2N7000 , APM9966 , APM9966C , APM9966CO , APM9968C , APM9968CO , APM9984CCG , APM9986CO , APM9988CO .

 


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