Alle MOSFET. 25P10G Datenblatt

 

25P10G MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: 25P10G

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 120 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 30 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Anstiegszeit (tr): 80 nS

Drain-Kapazität (Cd): 790 pF

Ausgangswiderstand RDS(on): 0.05 Ohm

Transistorgehäuse: TO252

Ersatz (vergleichstyp) für 25P10G Transistor

 

 

25P10G Datasheet (PDF)

1.1. 25p10g.pdf Size:1652K _goford

25P10G
25P10G

GOFORD 25N10G Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V mΩ -25A -100V 42 ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High de

5.1. sum25p10-138.pdf Size:158K _update_mosfet

25P10G
25P10G

SUM25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) • 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 • Material categorization: 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

5.2. sup25p10-138.pdf Size:128K _update_mosfet

25P10G
25P10G

SUP25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) • 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 • Material categorization: 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.

 5.3. utt25p10.pdf Size:163K _utc

25P10G
25P10G

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor driver

5.4. 25p10.pdf Size:1819K _goford

25P10G
25P10G

GOFORD 25P10 Description The 25P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V mΩ -25A -100V 42 ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High den

Anderen MOSFET... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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