Alle MOSFET. FTK03N10 Datenblatt

 

FTK03N10 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FTK03N10

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.5 W

Maximale Drain-Source-Spannung (Vds): 100 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 3 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 7.4 nS

Drain-Kapazität (Cd): 120 pF

Ausgangswiderstand (Rds): 0.14 Ohm

Transistorgehäuse: SOT89

Ersatz (vergleichstyp) für FTK03N10 Transistor

 

FTK03N10 Datasheet (PDF)

1.1. ftk03n10.pdf Size:315K _first_silicon

FTK03N10
FTK03N10

SEMICONDUCTOR FTK03N10 TECHNICAL DATA N-Channel MOSFET A C H G DIM MILLIMETERS A 4.70 MAX _ DESCRIPTION B 2.50 0.20 C 1.70 MAX D D D 0.45 0.15/-0.10 K E 4.25 MAX The FTK03N10 usesadvanced trench technology and design to _ F F F 1.50 0.10 G 0.40 TYP H 1.7 MAX provide excellent RDS(ON) with low gate charge . J 0.7 MIN K 0.5 0.15/-0.10 1 2 3 This device is suitable f

Anderen MOSFET... 2SK3455B , 2SK3534-01MR , 2SK3674-01L , 2SK3674-01S , 2SK3674-01SJ , 2SK3899 , FTK9451 , FTK9452 , J112 , FTK100N10P , FTK1013 , FTK1016 , FTK1090 , FTK10N10 , FTK10N60DD , FTK10N60F , FTK10N60P .

 


FTK03N10
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