Alle MOSFET. IRF5305 Datenblatt

 

IRF5305 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRF5305

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 110 W

Maximale Drain-Source-Spannung (Vds): 55 V

Maximale Gate-Source-Spannung (Vgs): 10 V

Maximaler Drainstrom (Id): 31 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Ladung (Qg): 42 nC

Ausgangswiderstand RDS(on): 0.06 Ohm

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für IRF5305 Transistor

 

 

IRF5305 Datasheet (PDF)

1.1. irf5305pbf.pdf Size:182K _international_rectifier

IRF5305
IRF5305

PD - 94788 IRF5305PbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

1.2. irf5305.pdf Size:124K _international_rectifier

IRF5305
IRF5305

PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

 1.3. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

IRF5305
IRF5305

PD - 95957 IRF5305S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

1.4. irf5305s.pdf Size:171K _international_rectifier

IRF5305
IRF5305

PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

Anderen MOSFET... IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF540N , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 .

Back to Top

 


IRF5305
  IRF5305
  IRF5305
  IRF5305
 

social 

Liste

Letztes Update

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

Back to Top