Alle MOSFET. IRF5305L Datenblatt

 

IRF5305L MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: IRF5305L

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: P

Gesamt-Verlustleistung (Pd): 110 W

Maximale Drain-Source-Spannung (Vds): 55 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 31 A

Höchste Sperrschichttemperatur (Tj): 175 °C

Gate-Source-Schwellspannung Vgs(th): 4 V

Gate-Ladung (Qg): 42 nC

Ausgangswiderstand RDS(on): 0.06 Ohm

Transistorgehäuse: TO262

Ersatz (vergleichstyp) für IRF5305L Transistor

 

IRF5305L Datasheet (PDF)

1.1. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

IRF5305L
IRF5305L

PD - 95957 IRF5305S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

3.1. irf5305pbf.pdf Size:182K _international_rectifier

IRF5305L
IRF5305L

PD - 94788 IRF5305PbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

3.2. irf5305.pdf Size:124K _international_rectifier

IRF5305L
IRF5305L

PD - 91385B IRF5305 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175C Operating Temperature Fast Switching RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

 3.3. irf5305s.pdf Size:171K _international_rectifier

IRF5305L
IRF5305L

PD - 91386C IRF5305S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

Anderen MOSFET... IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 , IRF5305 , 2N7000 , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 .

 
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