Alle MOSFET. FTK6014A Datenblatt

 

FTK6014A MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: FTK6014A

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 100 W

Maximale Drain-Source-Spannung (Vds): 60 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 60 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 14.2 nS

Drain-Kapazität (Cd): 190 pF

Ausgangswiderstand (Rds): 0.014 Ohm

Transistorgehäuse: TO263

Ersatz (vergleichstyp) für FTK6014A Transistor

 

FTK6014A Datasheet (PDF)

1.1. ftk6014a.pdf Size:277K _first_silicon

FTK6014A
FTK6014A

SEMICONDUCTOR FTK6014A TECHNICAL DATA Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mΩ max. Fully characterized avalanche voltage and current Description: The FTK6014A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability

3.1. ftk6014.pdf Size:473K _first_silicon

FTK6014A
FTK6014A

SEMICONDUCTOR FTK6014 TECHNICAL DATA Feathers: ID =60A � Advanced trench process technology BV=60V � avalanche energy, 100% test Rdson=14mΩ (max. � Fully characterized avalanche voltage and current Description: The FTK6014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device re

5.1. ftk60p05s.pdf Size:455K _first_silicon

FTK6014A
FTK6014A

SEMICONDUCTOR FTK60P05S TECHNICAL DATA P-Channel Enhancement Mode Power MOSFET ID V(BR)DSS RDS(on)MAX SOP-8 -5A 10V -60V 80mΩ@- Description The FTK60P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application VDS =-60V,ID =-5A Power switching application

5.2. ftk60n04d.pdf Size:341K _first_silicon

FTK6014A
FTK6014A

SEMICONDUCTOR FTK60N04D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK60N04D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 ± 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 ± 0 2 C 5 20 ± 0 2 It can be used in awide variety of applications. D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 H H 1 00 MAX I 2 30 ± 0

Anderen MOSFET... FTK730F , FTK730P , FTK7328 , FTK7509 , FTK7510 , FTK7510F , FTK7510P , FTK6014 , IRF1404 , FTK60N04D , FTK60P05S , FTK6401 , FTK640F , FTK640P , FTK6601 , FTK6601S , FTK6808 .

 


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