Alle MOSFET. WNM2034 Datenblatt

 

WNM2034 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: WNM2034

Markierungscode: W34

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 0.7 W

Maximale Drain-Source-Spannung (Vds): 20 V

Maximale Gate-Source-Spannung (Vgs): 12 V

Maximaler Drainstrom (Id): 3.6 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 3.2 nS

Drain-Kapazität (Cd): 60 pF

Ausgangswiderstand (Rds): 0.047 Ohm

Transistorgehäuse: SOT23

Ersatz (vergleichstyp) für WNM2034 Transistor

 

WNM2034 Datasheet (PDF)

1.1. wnm2034.pdf Size:136K _tysemi

WNM2034
WNM2034

Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) Rdson ( ) 0.037 @ 10V 20 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology 3 and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch application

4.1. wnm2030.pdf Size:559K _willsemi

WNM2034
WNM2034

WNM2030 WNM2030 Http://www.sh-willsemi.com Single N-Channel, 20V, 0.95A, Power MOSFET D VDS (V) Rds(on) ( ) 0.210@ VGS=4.5V S G 20 0.250@ VGS=2.5V SOT-723 0.305@ VGS=1.8V ESD Protected Descriptions D 3 The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2 with low gate ch

5.1. wnm2024.pdf Size:908K _willsemi

WNM2034
WNM2034

WNM2024 WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for us

5.2. wnm2020.pdf Size:440K _willsemi

WNM2034
WNM2034

WNM2020 WNM2020 Http://www.sh-willsemi.com N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) D 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D with low gate charge. This device is suitable for

5.3. wnm2016.pdf Size:330K _willsemi

WNM2034
WNM2034

WNM2016 WNM2016 N-Channel, 20V, 3.2A, Power MOSFET Http://www.willsemi.com D V(BR)DSS Rds(on) 40 @ 4.5V S 20 47 @ 2.5V G 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use 2 1 in DC-DC conversi

5.4. wnm2021.pdf Size:502K _willsemi

WNM2034
WNM2034

WNM2021 WNM2021 Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-323 Descriptions D The WNM2021 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

5.5. wnm2046b.pdf Size:1480K _willsemi

WNM2034
WNM2034

WNM2046B WNM2046B Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com G VDS (V) Typical Rds(on) (Ω) S 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V 0.315@ VGS=1.8V DFN1006-3L Descriptions The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This device is suit

5.6. wnm2072.pdf Size:1935K _willsemi

WNM2034
WNM2034

WNM2072 WNM2072 Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com G VDS (V) Typical Rds(on) (Ω) S 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V 0.315@ VGS=1.8V ESD Protected DFN1006-3L Descriptions The WNM2072 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. This de

5.7. wnm2046.pdf Size:1062K _willsemi

WNM2034
WNM2034

WNM2046 WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com (1) (2) G VDS (V) Typical Rds(on) (Ω) S 0.220@ VGS=4.5V (3) D 20 0.260@ VGS=2.5V 0.315@ VGS=1.8V DFN1006-3L Descriptions (3) The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D technology and design to provide excellent RDS (ON) with low gate charge. Thi

5.8. wnm2025.pdf Size:442K _tysemi

WNM2034
WNM2034

Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2

5.9. wnm2023.pdf Size:388K _tysemi

WNM2034
WNM2034

Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) (Ω) 0.038@ VGS=4.5V 20 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

5.10. wnm2024.pdf Size:393K _tysemi

WNM2034
WNM2034

Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) (Ω) 0.027@ VGS=4.5V 20 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in 1 2 DC

5.11. wnm2020.pdf Size:167K _tysemi

WNM2034
WNM2034

Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use in DC-DC convers

5.12. wnm2027.pdf Size:124K _tysemi

WNM2034
WNM2034

Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET Rds(on) Id V(BR)DSS (Max. mΩ) (A) 45 @ 4.5V 3.6 20 55 @ 2.5V 3.1 66 @ 1.8V 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC

5.13. wnm2016.pdf Size:99K _tysemi

WNM2034
WNM2034

Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion and power swit

5.14. wnm2020.pdf Size:1282K _kexin

WNM2034
WNM2034

SMD Type MOSFET N-Channel MOSFET WNM2020 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 0.83 A 1 2 ● RDS(ON) < 310mΩ (VGS = 4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 ● RDS(ON) < 360mΩ (VGS = 2.5V) ● RDS(ON) < 460mΩ (VGS = 1.8V) 1. Gate 2. Source D 3. Drain 3 1 2 G S ■ Absolute Maximum Ratings Ta = 2

Anderen MOSFET... PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , IRFP150N , XP151A11B0MR , XP151A12A2MR , XP151A13A0MR , XP152A11E5MR , XP152A12C0MR , CM100N03 , CM10N40 , CM10N60 .

 


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