Alle MOSFET. CS10N50F_A9R Datenblatt

 

CS10N50F_A9R MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: CS10N50F_A9R

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 40 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 10 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 20 nS

Drain-Kapazität (Cd): 154 pF

Ausgangswiderstand (Rds): 0.75 Ohm

Transistorgehäuse: TO220F

Ersatz (vergleichstyp) für CS10N50F_A9R Transistor

 

CS10N50F_A9R Datasheet (PDF)

1.1. cs10n50f a9r.pdf Size:272K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N50F A9R General Description: VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

3.1. cs10n50 a8r.pdf Size:266K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N50 A8R General Description: VDSS 500 V CS10N50 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

5.1. cs10n65 a8hd.pdf Size:356K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description: ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.2. cs10n65f a9r.pdf Size:273K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65F A9R General Description: VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.3. cs10n60 a8r.pdf Size:266K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60 A8R General Description: VDSS 600 V CS10N60 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.4. cs10n70f a9d.pdf Size:348K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N70F A9D VDSS 700 V General Description: ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

5.5. cs10n70 a8d.pdf Size:350K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N70 A8D VDSS 700 V General Description: ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.6. cs10n80 and.pdf Size:304K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N80 AND General Description: VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

5.7. cs10n60 a8hd.pdf Size:353K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60 A8HD VDSS 600 V General Description: ID 10 A CS10N60 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.8. cs10n80 a8d.pdf Size:547K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N80 A8D General Description: VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.9. cs10n80f a9d.pdf Size:546K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N80F A9D General Description: VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.10. cs10n65f a9hd.pdf Size:351K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD VDSS 650 V General Description: ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.11. cs10n60f a9r.pdf Size:272K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60F A9R General Description: VDSS 600 V CS10N60F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.12. cs10n65 a8r.pdf Size:267K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N65 A8R General Description: VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.13. cs10n60f a9hd.pdf Size:351K _crhj

CS10N50F_A9R
CS10N50F_A9R

Silicon N-Channel Power MOSFET R ○ CS10N60F A9HD VDSS 600 V General Description: ID 10 A CS10N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.6 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

Anderen MOSFET... CM8N80 , CM8N80F , CM9N20 , CM9N90PZ , CS100N03_B4 , CS100N03_B8 , CS100N03F_B9 , CS10N50_A8R , IRFP260N , CS10N60_A8HD , CS10N60_A8R , CS10N60F_A9HD , CS10N60F_A9R , CS10N65_A8HD , CS10N65_A8R , CS10N65F_A9HD , CS10N65F_A9R .

 


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