Alle MOSFET. CS1N60_B1R Datenblatt

 

CS1N60_B1R MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: CS1N60_B1R

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 3 W

Maximale Drain-Source-Spannung (Vds): 600 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 1.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 5 nS

Drain-Kapazität (Cd): 18 pF

Ausgangswiderstand (Rds): 8 Ohm

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für CS1N60_B1R Transistor

 

CS1N60_B1R Datasheet (PDF)

1.1. cs1n60 b1r.pdf Size:1006K _crhj

CS1N60_B1R
CS1N60_B1R

Silicon N-Channel Power MOSFET R ○ CS1N60 B1R General Description: VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

2.1. cs1n60 b3r.pdf Size:991K _crhj

CS1N60_B1R
CS1N60_B1R

Silicon N-Channel Power MOSFET R ○ CS1N60 B3R General Description: VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

3.1. cs1n60 to-252.pdf Size:241K _can-sheng

CS1N60_B1R
CS1N60_B1R

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

3.2. cs1n60 to-92.pdf Size:245K _can-sheng

CS1N60_B1R
CS1N60_B1R

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors 1N60 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits MAXIMU

3.3. cs1n60 a1h.pdf Size:537K _crhj

CS1N60_B1R
CS1N60_B1R

Silicon N-Channel Power MOSFET R ○ CS1N60 A1H General Description: VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.4. cs1n60 a3h.pdf Size:532K _crhj

CS1N60_B1R
CS1N60_B1R

Silicon N-Channel Power MOSFET R ○ CS1N60 A3H General Description: VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.5. cs1n60 c3h.pdf Size:530K _crhj

CS1N60_B1R
CS1N60_B1R

Silicon N-Channel Power MOSFET R ○ CS1N60 C3H General Description: VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

3.6. cs1n60 c1h.pdf Size:483K _crhj

CS1N60_B1R
CS1N60_B1R

Silicon N-Channel Power MOSFET R ○ CS1N60 C1H General Description: VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Anderen MOSFET... CS15N50F_A9R , CS16N60_A8H , CS16N60F_A9H , CS19N40_A8H , CS19N40_AN , CS1N50_A1 , CS1N60_A1H , CS1N60_A3H , 2N7000 , CS1N60_B3R , CS1N60_C1H , CS1N60_C3H , CS1N65_A1 , CS1N65_A3 , CS1N65_B1 , CS1N65_B3 , CS1N70_A3H-G .

 


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