Alle MOSFET. CS1N65_B1 Datenblatt

 

CS1N65_B1 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: CS1N65_B1

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 3 W

Maximale Drain-Source-Spannung (Vds): 650 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 1.5 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 4.5 nS

Drain-Kapazität (Cd): 17 pF

Ausgangswiderstand (Rds): 9.5 Ohm

Transistorgehäuse: TO92

Ersatz (vergleichstyp) für CS1N65_B1 Transistor

 

CS1N65_B1 Datasheet (PDF)

1.1. cs1n65 b1.pdf Size:546K _crhj

CS1N65_B1
CS1N65_B1

Silicon N-Channel Power MOSFET R ○ CS1N65 B1 General Description: VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

2.1. cs1n65 b3.pdf Size:525K _crhj

CS1N65_B1
CS1N65_B1

Silicon N-Channel Power MOSFET R ○ CS1N65 B3 General Description: VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

3.1. cs1n65 a1.pdf Size:540K _crhj

CS1N65_B1
CS1N65_B1

Silicon N-Channel Power MOSFET R ○ CS1N65 A1 General Description: VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

3.2. cs1n65 a3.pdf Size:533K _crhj

CS1N65_B1
CS1N65_B1

Silicon N-Channel Power MOSFET R ○ CS1N65 A3 General Description: VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25℃) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Anderen MOSFET... CS1N60_A1H , CS1N60_A3H , CS1N60_B1R , CS1N60_B3R , CS1N60_C1H , CS1N60_C3H , CS1N65_A1 , CS1N65_A3 , IRF3710 , CS1N65_B3 , CS1N70_A3H-G , CS1N80_A1H , CS1N80_A3H , CS1N80_A4H , CS20N50_A8H , CS20N50_ANH , CS20N60_A8H .

 


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