Alle MOSFET. CS20N50_A8H Datenblatt

 

CS20N50_A8H MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: CS20N50_A8H

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 230 W

Maximale Drain-Source-Spannung (Vds): 500 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 20 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 75 nS

Drain-Kapazität (Cd): 285 pF

Ausgangswiderstand (Rds): 0.3 Ohm

Transistorgehäuse: TO220AB

Ersatz (vergleichstyp) für CS20N50_A8H Transistor

 

CS20N50_A8H Datasheet (PDF)

1.1. cs20n50 a8h.pdf Size:352K _crhj

CS20N50_A8H
CS20N50_A8H

Silicon N-Channel Power MOSFET R ○ CS20N50 A8H General Description: VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.2. cs20n50 anh.pdf Size:363K _crhj

CS20N50_A8H
CS20N50_A8H

Silicon N-Channel Power MOSFET R ○ CS20N50 ANH General Description: VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.1. cs20n60 a8h.pdf Size:434K _crhj

CS20N50_A8H
CS20N50_A8H

Silicon N-Channel Power MOSFET R ○ CS20N60 A8H VDSS 600 V General Description: ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.2. cs20n60 anh.pdf Size:437K _crhj

CS20N50_A8H
CS20N50_A8H

Silicon N-Channel Power MOSFET R ○ CS20N60 ANH VDSS 600 V General Description: ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.3. cs20n65f a9h.pdf Size:431K _crhj

CS20N50_A8H
CS20N50_A8H

Silicon N-Channel Power MOSFET R ○ CS20N65F A9H VDSS 650 V General Description: ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.4. cs20n60f a9h.pdf Size:431K _crhj

CS20N50_A8H
CS20N50_A8H

Silicon N-Channel Power MOSFET R ○ CS20N60F A9H VDSS 600 V General Description: ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Anderen MOSFET... CS1N65_A1 , CS1N65_A3 , CS1N65_B1 , CS1N65_B3 , CS1N70_A3H-G , CS1N80_A1H , CS1N80_A3H , CS1N80_A4H , IRFP450 , CS20N50_ANH , CS20N60_A8H , CS20N60_ANH , CS20N60F_A9H , CS20N65F_A9H , CS220N04_A8H , CS24N40_A8 , CS24N40F_A9H .

 


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