Alle MOSFET. CS60N04_A4 Datenblatt

 

CS60N04_A4 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt.

Typenbezeichnung: CS60N04_A4

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 52 W

Maximale Drain-Source-Spannung (Vds): 40 V

Maximale Gate-Source-Spannung (Vgs): 20 V

Maximaler Drainstrom (Id): 60 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Anstiegszeit (tr): 14 nS

Drain-Kapazität (Cd): 150 pF

Ausgangswiderstand (Rds): 0.013 Ohm

Transistorgehäuse: TO252

Ersatz (vergleichstyp) für CS60N04_A4 Transistor

 

CS60N04_A4 Datasheet (PDF)

1.1. cs60n04 a4.pdf Size:195K _crhj

CS60N04_A4
CS60N04_A4

Silicon N-Channel Trench MOSFET R ○ CS60N04 A4 General Description: VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25℃) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 mΩ the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

4.1. cs60n06 c4.pdf Size:688K _crhj

CS60N04_A4
CS60N04_A4

Silicon N-Channel Power MOSFET R ○ CS60N06 C4 General Description: VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 mΩ which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Anderen MOSFET... CS5N65_A4 , CS5N65_A7H , CS5N65_A8H , CS5N65F_A9H , CS5N70_A4 , CS5N70F_A9 , CS5N90_ARH-G , CS5N90F_A9H , IRF150 , CS60N04_C4 , CS630_A3H , CS630_A4H , CS630_A8H , CS630F_A9H , CS640_A0H , CS640_A8H , CS640F_A9H .

 


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MOSFET AP9960GJ-HF | AP9960GH-HF | AP9938GEYT-HF | AP9938GEY-HF | AP9918GH | AP9916GJ | AP9916GH | AP9915GK | AP9980GM-HF | AP9980GJ-HF | AP9980GH-HF | AP9977AGH-HF | AP9974GS | AP9971GJ-HF | AP9971GH-HF |